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MJW18020G - onsemi

Description: High and Excellent Gain Linearity; Fast and Very Tight Switching Times Parameters tsi and tfi; Very Stable Leakage Current due to the Planar Structure; High Reliability; Pb-Free Package is Available

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PCB Footprints
MJW18020G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 CASE 340L-02
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3D Models
MJW18020G - onsemi  - 3D model - Transistor Outline, Vertical - TO-247 CASE 340L-02
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MJW18020G Details

  • Manufacturer Part Number:

    MJW18020G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Package Description:

    LEAD FREE, CASE 340L-02, TO-247, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    HIGH RELIABILITY

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    30 A

  • Collector-Emitter Voltage-Max:

    450 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5.5

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    180 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    13 MHz

MJW18020G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, thermal vias can be used to further improve heat dissipation.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal interface material to reduce thermal resistance. Also, consider derating the device's power handling at high temperatures.
  • A gate drive circuit with a low impedance output stage and a high current capability (e.g., > 1A) is recommended. A gate resistor (RG) of 10-20 ohms and a gate-source voltage (VGS) of 10-15V are typical values.
  • Use a transient voltage suppressor (TVS) or a zener diode to clamp voltage transients. Ensure that the device is operated within the recommended voltage and current ratings. A fuse or a current limiter can also be used to prevent overcurrent conditions.
  • Store the devices in their original packaging or in a dry, ESD-protected environment. Avoid bending or flexing the leads. Handle the devices by the body, not the leads, to prevent mechanical stress.

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MJW18020G Overview

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Part Image MJW18020 onsemi

Power Bipolar Transistor, 30A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-247AD, Plastic/Epoxy, 3 Pin