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MM3Z33VT1G - onsemi

Description: Wide Zener Voltage Range Selection, 2.4V to 75V; VZ Tolerance Selection of ±5% (C Series); Very Small and Thin SMD package; Matte Tin(Sn) finish, Pb Free

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Symbol
MM3Z33VT1G - onsemi - PCB symbol
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PCB Footprints
MM3Z33VT1G - onsemi PCB footprint - Small Outline Diode - Small Outline Diode - SOD−323 1.70x1.25x0.85 CASE 477 ISSUE K
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3D Models
MM3Z33VT1G - onsemi - 3D model - Small Outline Diode - SOD−323 1.70x1.25x0.85 CASE 477 ISSUE K
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MM3Z33VT1G Details

  • Manufacturer Part Number:

    MM3Z33VT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOD-323 2 LEAD

  • Pin Count:

    2

  • Manufacturer Package Code:

    477-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    ZENER DIODE

  • Dynamic Impedance-Max:

    80 Ω

  • Forward Voltage-Max (VF):

    0.9 V

  • JESD-30 Code:

    R-PDSO-G2

  • JESD-609 Code:

    e3

  • Knee Impedance-Max:

    300 Ω

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.3 W

  • Qualification Status:

    Not Qualified

  • Reference Voltage-Nom:

    33 V

  • Reverse Current-Max:

    0.05 µA

  • Reverse Test Voltage:

    23.2 V

  • Surface Mount:

    YES

  • Technology:

    ZENER

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Voltage Tol-Max:

    6.06%

  • Working Test Current:

    2 mA

MM3Z33VT1G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the package to connect the thermal pad to the copper area.
  • Ensure that the device is operated within the recommended temperature range (-40°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, consider derating the device's power handling capability at high temperatures.
  • The MM3Z33VT1G has an integrated ESD protection diode, but additional external protection may be required depending on the application. A minimum of 2kV HBM (Human Body Model) and 200V MM (Machine Model) protection is recommended.
  • Yes, the MM3Z33VT1G is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is operated within the recommended voltage and current ratings, and consider the effects of switching losses and thermal performance.
  • The gate resistor value depends on the application's switching frequency, voltage, and current requirements. A general guideline is to use a gate resistor value between 10Ω to 100Ω. Consult the application note or onsemi's support resources for more specific guidance.

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MM3Z33VT1G Overview

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