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MMBD4448 - onsemi

Description: Obsolete - 30 V Schottky Diode, dual, series, UHF

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PCB Footprints
MMBD4448 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 3L_2023
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3D Models
MMBD4448 - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 3L_2023
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MMBD4448 Details

  • Manufacturer Part Number:

    MMBD4448

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-23-3

  • Package Description:

    TO-236AB, 3 PIN

  • Manufacturer Package Code:

    318BM

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHES

  • Application:

    GENERAL PURPOSE

  • Breakdown Voltage-Min:

    100 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1 V

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    2 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.35 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    5 µA

  • Reverse Recovery Time-Max:

    0.004 µs

  • Reverse Test Voltage:

    75 V

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MMBD4448 Frequently Asked Questions (FAQs)

  • The MMBD4448 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 85°C for optimal performance.
  • To ensure proper biasing, the base-emitter voltage (VBE) should be around 0.7V, and the collector-emitter voltage (VCE) should be around 1V to 2V. Additionally, the base current should be limited to prevent overheating.
  • The MMBD4448 can handle a maximum collector current (IC) of 500mA per transistor, and a maximum total current of 2A for the entire array.
  • To protect the MMBD4448 from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag or container.
  • The MMBD4448 is designed as a general-purpose transistor array, suitable for switching and amplification applications. However, its performance may vary depending on the specific application and circuit design.

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MMBD4448 Overview

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Part Image MMBD4448 Sensitron Semiconductors

Rectifier Diode, 1 Phase, 1 Element, 0.25A, 75V V(RRM), Silicon

Part Image MMBD4448 Fairchild Semiconductor Corporation

Rectifier Diode, 1 Phase, 1 Element, 0.2A, 100V V(RRM), Silicon, TO-236AB

Part Image MMBD4448-TP-HF Micro Commercial Components

Rectifier Diode, 1 Phase, 1 Element, 0.25A, 75V V(RRM), Silicon

Part Image MMBD4448L99Z Fairchild Semiconductor Corporation

Rectifier Diode, 1 Phase, 1 Element, 0.2A, 100V V(RRM), Silicon, TO-236AB

Part Image MMBD4448-T Micro Commercial Components

Rectifier Diode

For a full list of alternate parts for MMBD4448, check out Findchips.com