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MMBF4416A - onsemi

Description: This device is designed for RF amplifiers.; Sourced from process 50.

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PCB Footprints
MMBF4416A - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-3L
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3D Models
MMBF4416A - onsemi  - 3D model - SOT23 (3-Pin) - SOT-3L
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MMBF4416A Details

  • Manufacturer Part Number:

    MMBF4416A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Package Description:

    SOT-23, 3 PIN

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.82

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    0.8 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MMBF4416A Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MMBF4416A is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and power dissipation. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure safe operation.
  • To ensure the MMBF4416A is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is between 0.6V to 0.8V, and the collector-emitter voltage (Vce) is at least 1V to 2V higher than the base-emitter voltage. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • For optimal thermal management, it is recommended to use a PCB with a thermal pad or a heat sink attached to the transistor. The transistor should be placed near a ground plane to reduce thermal resistance. A minimum of 1 oz copper thickness is recommended for the PCB. Additionally, ensure that the transistor is soldered correctly to the PCB to minimize thermal resistance.
  • While the MMBF4416A is primarily designed for linear amplification, it can be used in switching applications with some caution. However, the transistor's switching characteristics, such as rise and fall times, may not be optimized for high-frequency switching. Additionally, the device's maximum collector current and power dissipation ratings should be carefully considered to ensure reliable operation.
  • To protect the MMBF4416A from electrostatic discharge (ESD), it is recommended to handle the device with anti-static wrist straps, mats, or other ESD protection equipment. The device should be stored in anti-static packaging, and PCBs should be designed with ESD protection circuits, such as TVS diodes or resistors, to prevent ESD damage.

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MMBF4416A Overview

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