MMBZ10VALT116 - ROHM Semiconductor

MMBZ10VALT116 Details

• Manufacturer Part Number:

  MMBZ10VALT116

• Pbfree Code:

  Yes

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Not Recommended

• ECCN Code:

  EAR99

• HTS Code:

  8541.10.00.50

• Manufacturer:

  ROHM Semiconductor

• YTEOL:

  3

• Additional Feature:

  HIGH RELIABILITY

• Breakdown Voltage-Max:

  10.5 V

• Breakdown Voltage-Min:

  9.5 V

• Configuration:

  COMMON ANODE, 2 ELEMENTS

• Diode Element Material:

  SILICON

• Diode Type:

  TRANS VOLTAGE SUPPRESSOR DIODE

• JESD-30 Code:

  R-PDSO-G3

• Moisture Sensitivity Level:

  1

• Non-rep Peak Rev Power Dis-Max:

  24 W

• Number of Elements:

  2

• Number of Terminals:

  3

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity:

  UNIDIRECTIONAL

• Power Dissipation-Max:

  0.225 W

• Reference Standard:

  IEC-61000-4-2

• Rep Pk Reverse Voltage-Max:

  6.5 V

• Surface Mount:

  YES

• Technology:

  AVALANCHE

• Terminal Form:

  GULL WING

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  30