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MMBZ12VALFHT116 - ROHM Semiconductor

Description: ROHM - MMBZ12VALFHT116 - TVS DIODE, AEC-Q101, 40W, 8.5V, SOT-23

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MMBZ12VALFHT116 - ROHM Semiconductor PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - MMBZ12VALFHT116
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MMBZ12VALFHT116 - ROHM Semiconductor  - 3D model - SOT23 (3-Pin) - MMBZ12VALFHT116
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MMBZ12VALFHT116 Details

  • Manufacturer Part Number:

    MMBZ12VALFHT116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Additional Feature:

    HIGH RELIABILITY

  • Breakdown Voltage-Max:

    12.6 V

  • Breakdown Voltage-Min:

    11.4 V

  • Configuration:

    COMMON ANODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    40 W

  • Number of Elements:

    2

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.225 W

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2

  • Rep Pk Reverse Voltage-Max:

    8.5 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MMBZ12VALFHT116 Frequently Asked Questions (FAQs)

  • The recommended land pattern for MMBZ12VALFHT116 can be found in ROHM's packaging specification document, which provides detailed information on the recommended pad layout and dimensions for optimal soldering and reliability.
  • To handle the ESD sensitivity of MMBZ12VALFHT116, it is recommended to follow standard ESD handling procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. Additionally, devices should be stored in their original packaging or in ESD-safe containers to prevent damage.
  • The maximum allowable power dissipation for MMBZ12VALFHT116 depends on the operating conditions, such as ambient temperature and PCB layout. As a general guideline, the maximum power dissipation can be calculated using the thermal resistance and maximum junction temperature specified in the datasheet.
  • Yes, MMBZ12VALFHT116 is suitable for use in high-reliability and automotive applications. ROHM Semiconductor provides additional documentation and support for these applications, including AEC-Q101 qualification and PPAP (Production Part Approval Process) support.
  • The optimal biasing conditions for MMBZ12VALFHT116 depend on the specific application and operating conditions. ROHM Semiconductor provides application notes and simulation models to help designers determine the optimal biasing conditions for their specific use case.

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MMBZ12VALFHT116 Overview

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