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MMBZ12VALT116 - ROHM Semiconductor

Description: Trans.Volt.Suppressor 24W Dual SOT-23

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MMBZ12VALT116 - ROHM Semiconductor PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - https://l.facebook.com/l.php?u=https%3A%2F%2Fcomponentsearchengine.com%2Fga%2Fjobs.php%3FpartLimit%3
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MMBZ12VALT116 - ROHM Semiconductor  - 3D model - SOT23 (3-Pin) - https://l.facebook.com/l.php?u=https%3A%2F%2Fcomponentsearchengine.com%2Fga%2Fjobs.php%3FpartLimit%3
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MMBZ12VALT116 Details

  • Manufacturer Part Number:

    MMBZ12VALT116

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Additional Feature:

    HIGH RELIABILITY

  • Breakdown Voltage-Max:

    12.6 V

  • Breakdown Voltage-Min:

    11.4 V

  • Breakdown Voltage-Nom:

    12 V

  • Clamping Voltage-Max:

    17 V

  • Configuration:

    COMMON ANODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • Forward Voltage-Max (VF):

    0.9 V

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    40 W

  • Number of Elements:

    2

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.225 W

  • Reference Standard:

    IEC-61000-4-2; MIL-STD-883

  • Rep Pk Reverse Voltage-Max:

    8.5 V

  • Reverse Current-Max:

    0.005 µA

  • Reverse Test Voltage:

    8.5 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MMBZ12VALT116 Frequently Asked Questions (FAQs)

  • The recommended land pattern for MMBZ12VALT116 can be found in the ROHM Semiconductor's packaging specification document or in the IPC-7351 standard. It's essential to follow the recommended land pattern to ensure reliable soldering and to prevent thermal and mechanical stress on the component.
  • To prevent damage, handle the MMBZ12VALT116 by the body, avoiding touching the leads or the glass diode. Use anti-static wrist straps, mats, or packaging to prevent electrostatic discharge (ESD) damage. Avoid bending or flexing the leads, and use a pick-and-place machine or a vacuum pickup tool to handle the component during assembly.
  • The maximum allowable voltage for MMBZ12VALT116 is 12V, as specified in the datasheet. Exceeding this voltage may cause permanent damage to the component or affect its reliability.
  • The MMBZ12VALT116 is rated for operation up to 150°C. However, it's essential to consider the derating curve and the maximum allowable power dissipation to ensure reliable operation in high-temperature environments. Consult the datasheet and ROHM Semiconductor's application notes for more information.
  • The MMBZ12VALT116 has a cathode (K) and an anode (A) marked on the package. The cathode is the negative terminal, and the anode is the positive terminal. Ensure correct polarity during assembly to prevent damage or incorrect operation.

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MMBZ12VALT116 Overview

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