MMBZ12VALYFHT116 - ROHM Semiconductor

MMBZ12VALYFHT116 Details

• Manufacturer Part Number:

  MMBZ12VALYFHT116

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Package Description:

  SOT-23, 3 PIN

• ECCN Code:

  EAR99

• HTS Code:

  8541.10.00.50

• Date Of Intro:

  2020-05-27

• Manufacturer:

  ROHM Semiconductor

• YTEOL:

  6

• Additional Feature:

  HIGH RELIABILITY

• Breakdown Voltage-Max:

  12.6 V

• Breakdown Voltage-Min:

  11.4 V

• Breakdown Voltage-Nom:

  12 V

• Clamping Voltage-Max:

  17 V

• Configuration:

  COMMON ANODE, 2 ELEMENTS

• Diode Element Material:

  SILICON

• Diode Type:

  TRANS VOLTAGE SUPPRESSOR DIODE

• Forward Voltage-Max (VF):

  0.9 V

• JESD-30 Code:

  R-PDSO-G3

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Non-rep Peak Rev Power Dis-Max:

  40 W

• Number of Elements:

  2

• Number of Terminals:

  3

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity:

  UNIDIRECTIONAL

• Power Dissipation-Max:

  0.225 W

• Reference Standard:

  AEC-Q101; IEC-61000-4-2; MIL-STD-883

• Rep Pk Reverse Voltage-Max:

  8.5 V

• Reverse Current-Max:

  0.005 µA

• Reverse Test Voltage:

  8.5 V

• Surface Mount:

  YES

• Technology:

  ZENER

• Terminal Finish:

  Tin (Sn)

• Terminal Form:

  GULL WING

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  30