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MMBZ27VALYFHT116 - ROHM Semiconductor

Description: 22V, SOT-23, Dual Line, Anode Common, Automotive Transient Voltage Suppressor (AEC-Q101 Qualified)

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MMBZ27VALYFHT116 - ROHM Semiconductor  - 3D model
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MMBZ27VALYFHT116 Details

  • Manufacturer Part Number:

    MMBZ27VALYFHT116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Date Of Intro:

    2020-05-27

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Breakdown Voltage-Max:

    28.35 V

  • Breakdown Voltage-Min:

    25.65 V

  • Breakdown Voltage-Nom:

    27 V

  • Clamping Voltage-Max:

    40 V

  • Configuration:

    COMMON ANODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • Forward Voltage-Max (VF):

    0.9 V

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    40 W

  • Number of Elements:

    2

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.225 W

  • Reference Standard:

    IEC-61000-4-2; MIL-STD-883

  • Rep Pk Reverse Voltage-Max:

    22 V

  • Reverse Current-Max:

    0.005 µA

  • Reverse Test Voltage:

    22 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MMBZ27VALYFHT116 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the MMBZ27VALYFHT116 can be found in the ROHM Semiconductor's packaging specification document, which is usually available on their website. The document provides detailed information on the recommended pad layout, dimensions, and spacing for optimal assembly and reliability.
  • To prevent damage during assembly, it is recommended to handle the MMBZ27VALYFHT116 by the body or the tabs, avoiding touching the glass passivation or the metal pads. It is also recommended to use anti-static wrist straps, mats, or other ESD protection devices to prevent electrostatic discharge damage.
  • The maximum allowable voltage derating for the MMBZ27VALYFHT116 depends on the specific application and operating conditions. As a general rule, it is recommended to derate the voltage by 10-20% to ensure reliable operation and to prevent overheating or damage. However, it is recommended to consult with ROHM Semiconductor's application engineers or refer to their documentation for specific guidance.
  • The MMBZ27VALYFHT116 is rated for operation up to 150°C, but it is recommended to consult with ROHM Semiconductor's documentation or application engineers to determine the maximum allowable temperature for specific applications. It is also important to consider the thermal management and heat dissipation in the system design to prevent overheating or damage.
  • The correct polarity for the MMBZ27VALYFHT116 can be determined by referring to the datasheet or the package marking. The cathode (negative leg) is usually marked with a band or a dot, while the anode (positive leg) is usually unmarked. It is important to ensure correct polarity to prevent damage or incorrect operation.

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MMBZ27VALYFHT116 Overview

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