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MMSF3P02HDR2G - onsemi

Description: IDSS Specified at Elevated Temperature; Avalanche Energy Specified; Logic Level Gate Drive Can Be Driven by Logic ICs; Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life; Diode Exhibits High Speed, With Soft Recovery; Diode Is Characterized for Use In Bridge Circuits ; Mounting Information for SO-8 Package Provided; Miniature SO-8 Surface Mount Package Saves Board Space; Pb-Free Package is Available

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MMSF3P02HDR2G - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC-8 NB CAST 751-07
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MMSF3P02HDR2G - onsemi  - 3D model - Small Outline Packages - SOIC-8 NB CAST 751-07
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MMSF3P02HDR2G Details

  • Manufacturer Part Number:

    MMSF3P02HDR2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8 Narrow Body

  • Package Description:

    SO-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    751-07

  • ECCN Code:

    EAR99

  • Date Of Intro:

    1994-05-01

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    567 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    5.6 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MMSF3P02HDR2G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2oz copper thickness and a thermal via array under the package is recommended.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network are recommended to ensure stable operation.
  • The MMSF3P02HDR2G is rated for operation from -40°C to 150°C, but the maximum operating temperature range may vary depending on the specific application and use case.
  • ESD protection is critical for this device. Use ESD-sensitive handling and storage procedures, and consider adding ESD protection circuits or devices to the PCB design.
  • Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device by the package body, avoiding touching the leads or die. Use anti-static packaging and handling procedures.

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MMSF3P02HDR2G Overview

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