MRF8VP13350NR3 footprint, schematic symbol and 3D model by NXP

Symbol

click to zoom

PCB Footprints

MRF8VP13350NR3 - NXP PCB footprint - Other - Other - OM-780-4L

click to zoom

Datasheet Download Datasheet
Stock & Prices Price & Stock for MRF8VP13350NR3
Part Number MRF8VP13350NR3
Manufacturer NXP
Pin Count 4
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - OM-780-4L
Released Date Oct 19, 2023
Last Modified Date Oct 20, 2023 6:25 AM UTC
Pinout / Pin List Click Here (Member Only)

MRF8VP13350NR3 Details

Manufacturer Part Number:
MRF8VP13350NR3
Rohs Code:
Yes
Part Life Cycle Code:
Obsolete
Country Of Origin:
Malaysia
ECCN Code:
EAR99
HTS Code:
8541.29.00
Manufacturer:
NXP Semiconductors
YTEOL:
0
Case Connection:
SOURCE
Configuration:
SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min:
100 V
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band:
L BAND
JESD-30 Code:
R-PDFP-F4
JESD-609 Code:
e3
Moisture Sensitivity Level:
3
Number of Elements:
2
Number of Terminals:
4
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
225 °C
Operating Temperature-Min:
-40 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLATPACK
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Gain-Min (Gp):
17.5 dB
Surface Mount:
YES
Terminal Finish:
Tin (Sn)
Terminal Form:
FLAT
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
40
Transistor Application:
AMPLIFIER
Transistor Element Material:
SILICON

MRF8VP13350NR3 Frequently Asked Questions (FAQs)

The maximum power consumption of the MRF8VP13350NR3 is 360 mW, according to the datasheet. However, this value can vary depending on the operating frequency, voltage, and other factors. It's recommended to consult the datasheet and application notes for more information.
To optimize the performance of the MRF8VP13350NR3, ensure that the device is operated within the recommended operating conditions, such as voltage and temperature range. Additionally, optimize the PCB layout to minimize noise and interference, and use proper decoupling and filtering techniques to reduce electromagnetic interference (EMI).
The recommended operating frequency range for the MRF8VP13350NR3 is 1300-1350 MHz, according to the datasheet. However, the device can operate at other frequencies with reduced performance. Consult the datasheet and application notes for more information.
To handle thermal management for the MRF8VP13350NR3, ensure that the device is mounted on a heat sink or a thermally conductive substrate to dissipate heat. Additionally, ensure good airflow around the device and avoid blocking airflow to prevent overheating.
For optimal performance, ensure that the PCB layout is designed to minimize noise and interference. Use a solid ground plane, keep signal traces short and direct, and avoid crossing signal traces over each other. Additionally, use proper decoupling and filtering techniques to reduce EMI.

Trust Checks

Community Provided

System Verified

Community Approved

MRF8VP13350NR3 Overview

Use the download button to access the MRF8VP13350NR3 schematic symbol and PCB footprint.

To find more CAD model downloads similar to this part, try a partial part number search, like MRF8V, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

Parts related to MRF8VP13350NR3

Showing 0 results