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MRFE6VP5600HR6 - NXP

Description: RF MOSFET Transistors VHV6 600W 50V NI1230H

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MRFE6VP5600HR6 Details

  • Manufacturer Part Number:

    MRFE6VP5600HR6

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Additional Feature:

    ESD PROTECTED

  • Case Connection:

    SOURCE

  • Configuration:

    COMMON SOURCE, 2 ELEMENTS

  • DS Breakdown Voltage-Min:

    130 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.6 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-CDFM-F4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    225 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1670 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRFE6VP5600HR6 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MRFE6VP5600HR6 is -40°C to 150°C.
  • To optimize performance, ensure proper thermal management, use a low-loss PCB material, and optimize the input and output matching networks. Additionally, consider using a heat sink and thermal interface material to reduce thermal resistance.
  • The recommended PCB layout and spacing for the MRFE6VP5600HR6 include using a 4-layer PCB with a solid ground plane, keeping the RF traces as short as possible, and maintaining a minimum spacing of 10 mils between the device and other components.
  • To handle the high voltage and current requirements of the MRFE6VP5600HR6, use a suitable power supply and ensure that the PCB is designed to handle high currents. Additionally, consider using a voltage regulator and current limiter to prevent damage to the device.
  • Key considerations for thermal design and heat sinking include using a heat sink with a high thermal conductivity, applying a thermal interface material, and ensuring good airflow around the device. Additionally, consider using a thermal simulation tool to optimize the thermal design.

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MRFE6VP5600HR6 Overview

Use the download button to access the MRFE6VP5600HR6 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MRFE6, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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