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MRFE6VP61K25HSR5 - NXP

Description: RF MOSFET Transistors VHV6 1.25KW ISM NI1230HS

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MRFE6VP61K25HSR5 Details

  • Manufacturer Part Number:

    MRFE6VP61K25HSR5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Additional Feature:

    ESD PROTECTED

  • Case Connection:

    SOURCE

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DS Breakdown Voltage-Min:

    125 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.8 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-CDFM-F4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    225 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1300 W

  • Surface Mount:

    NO

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRFE6VP61K25HSR5 Frequently Asked Questions (FAQs)

  • The MRFE6VP61K25HSR5 can operate from -40°C to 150°C, but the recommended operating temperature range is -20°C to 120°C for optimal performance.
  • To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet. Typically, a voltage supply of 12-28V and a current of 100-500mA is recommended. Additionally, ensure the device is properly heat-sinked to prevent overheating.
  • The MRFE6VP61K25HSR5 can handle up to 25W of continuous power and up to 50W of peak power. However, it's essential to follow the recommended power handling guidelines outlined in the datasheet to prevent device damage.
  • To match the impedance of the MRFE6VP61K25HSR5 to your system, use a conjugate match technique. This involves designing an impedance matching network that presents a conjugate match to the device's output impedance. Consult the datasheet and application notes for more information.
  • For optimal performance and thermal management, follow these guidelines: use a multi-layer PCB with a solid ground plane, keep the device away from heat sources, use thermal vias to dissipate heat, and ensure good airflow around the device. Consult the datasheet and application notes for more detailed guidelines.

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MRFE6VP61K25HSR5 Overview

Use the download button to access the MRFE6VP61K25HSR5 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MRFE6, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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