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MSC080SMA120B4 - Microsemi Corporation

Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W

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PCB Footprints
MSC080SMA120B4 - Microsemi Corporation PCB footprint - Other - Other - TO-247 4-lead
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3D Models
MSC080SMA120B4 - Microsemi Corporation  - 3D model - Other - TO-247 4-lead
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MSC080SMA120B4 Details

  • Manufacturer Part Number:

    MSC080SMA120B4

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-09-20

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    37 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

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