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MSMBJ12A - Microsemi Corporation

Description: Diode TVS Single Uni-Dir 12V 600W 2-Pin SMB Bag

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PCB Footprints
MSMBJ12A - Microsemi Corporation PCB footprint - Diodes Moulded - Diodes Moulded - DO-214
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MSMBJ12A - Microsemi Corporation  - 3D model - Diodes Moulded - DO-214
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MSMBJ12A Details

  • Manufacturer Part Number:

    MSMBJ12A

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    DO-214AA

  • Package Description:

    PLASTIC, SMBJ, 2 PIN

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    HIGH RELIABILITY

  • Breakdown Voltage-Max:

    14.7 V

  • Breakdown Voltage-Min:

    13.3 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JEDEC-95 Code:

    DO-214AA

  • JESD-30 Code:

    R-PDSO-J2

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    600 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    1.38 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    12 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    J BEND

  • Terminal Position:

    DUAL

MSMBJ12A Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the MSMBJ12A is a standard SOT-23 package with a 1.3mm x 1.3mm body size and 0.5mm lead pitch. A minimum pad size of 0.6mm x 0.6mm is recommended for reliable soldering.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the maximum junction temperature (Tj) by 1°C for every 1W of power dissipation above 25°C. Additionally, ensure good thermal conduction by using a heat sink or thermal pad, and follow proper PCB design and layout guidelines.
  • The maximum surge current rating for the MSMBJ12A is 100A for a 10/1000μs waveform, as per the IEC 61000-4-5 standard. However, it's essential to consult the datasheet and application notes for specific surge current requirements and protection circuitry design.
  • Yes, the MSMBJ12A can be used in switching power supply applications, but it's essential to ensure that the device is operated within its safe operating area (SOA) and that the circuit is designed to minimize voltage and current stresses. Consult the datasheet and application notes for specific guidance on using the MSMBJ12A in switching power supply applications.
  • To select the correct TVS diode for your specific application, consider factors such as the maximum voltage, current, and power requirements, as well as the desired level of protection and response time. Consult the datasheet and application notes for guidance on selecting the appropriate TVS diode for your application.

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MSMBJ12A Overview

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Part Image MSMBJ12AE3 Microsemi Corporation (now Microchip)

Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA