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MSMCJLCE6.5AE3 - Microsemi Corporation

Description: ESD Suppressors / TVS Diodes TVS

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MSMCJLCE6.5AE3 - Microsemi Corporation PCB footprint - Diodes Moulded - Diodes Moulded - do-214ba
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MSMCJLCE6.5AE3 - Microsemi Corporation  - 3D model - Diodes Moulded - do-214ba
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MSMCJLCE6.5AE3 Details

  • Manufacturer Part Number:

    MSMCJLCE6.5AE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    DO-214AB

  • Package Description:

    SMCJ, 2 PIN

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    HIGH RELIABILITY

  • Breakdown Voltage-Max:

    7.98 V

  • Breakdown Voltage-Min:

    7.22 V

  • Breakdown Voltage-Nom:

    7.6 V

  • Clamping Voltage-Max:

    11.2 V

  • Configuration:

    SINGLE

  • Diode Capacitance-Min:

    100 pF

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JEDEC-95 Code:

    DO-214AB

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    1500 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    5 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61000-4-2, 4-4, 4-5

  • Rep Pk Reverse Voltage-Max:

    6.5 V

  • Reverse Current-Max:

    1000 µA

  • Reverse Test Voltage:

    6.5 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

MSMCJLCE6.5AE3 Frequently Asked Questions (FAQs)

  • Microsemi recommends a 4-layer PCB with a solid ground plane, and thermal vias under the device to dissipate heat. A thermal pad on the bottom of the device should be connected to a heat sink or a thermal plane on the PCB.
  • Follow the recommended biasing and configuration guidelines in the datasheet, and ensure that the device is operated within the specified voltage and current ranges. Additionally, consult the application notes and design guides provided by Microsemi for specific use cases.
  • The MSMCJLCE6.5AE3 is designed to meet the radiation hardness and reliability requirements of aerospace and defense applications. It is characterized for total ionizing dose (TID) and single event effects (SEE), and is available in various screening levels and grades. Consult the Microsemi radiation hardness and reliability datasheet for specific details.
  • Yes, the MSMCJLCE6.5AE3 is designed for high-reliability and safety-critical applications. It is manufactured and tested to meet the requirements of various industry standards, such as MIL-PRF-38535 and NASA's EEE-INST-002. However, it is essential to consult with Microsemi and perform thorough testing and validation to ensure the device meets the specific requirements of your application.
  • Consult the Microsemi application notes and design guides for troubleshooting and debugging guidelines. Use oscilloscopes and logic analyzers to monitor the device's signals and identify issues. Additionally, Microsemi provides technical support and resources to help resolve issues and optimize device performance.

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MSMCJLCE6.5AE3 Overview

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Part Image MQSMCJLCE6.5AE3 Microsemi Corporation (now Microchip)

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For a full list of alternate parts for MSMCJLCE6.5AE3, check out Findchips.com