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MT28FW02GBBA1HPC-0AAT - Micron

Description: • 2Gb stacked device (Two 1Gb die) • Single-level cell (SLC) process technology • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–VCC (I/O buffers) • Asynchronous random/page read – Page size: 16 words – Page access: 20ns (VCC = VCCQ = 2.7–3.6V) – Random access: 105ns (VCC = VCCQ = 2.7–3.6V) – Random access: 110ns (VCCQ = 1.65–VCC) • Buffer program (512-word program buffer) – 2.0 MB/s (TYP) when using full buffer program – 2.5 MB/s (TYP) when using accelerated buffer progra

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MT28FW02GBBA1HPC-0AAT - Micron PCB footprint - BGA - BGA - 64-LBGA
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MT28FW02GBBA1HPC-0AAT - Micron  - 3D model - BGA - 64-LBGA
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MT28FW02GBBA1HPC-0AAT Details

  • Manufacturer Part Number:

    MT28FW02GBBA1HPC-0AAT

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    LBGA-64

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    5.25

  • Access Time-Max:

    105 ns

  • Command User Interface:

    NO

  • Common Flash Interface:

    YES

  • Data Polling:

    YES

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PBGA-B64

  • Length:

    13 mm

  • Memory Density:

    2147483648 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Sectors/Size:

    2K

  • Number of Terminals:

    64

  • Number of Words:

    134217728 words

  • Number of Words Code:

    128000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    105 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    128MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    LBGA

  • Package Equivalence Code:

    BGA64,8X8,40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, LOW PROFILE

  • Page Size:

    16 words

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    3 V

  • Ready/Busy:

    YES

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    1.4 mm

  • Sector Size:

    128K

  • Standby Current-Max:

    0.00046 A

  • Supply Current-Max:

    0.031 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Toggle Bit:

    YES

  • Type:

    SLC NAND TYPE

  • Width:

    11 mm

  • Write Cycle Time-Max (tWC):

    0.00006 ms

MT28FW02GBBA1HPC-0AAT Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MT28FW02GBBA1HPC-0AAT is -40°C to 85°C.
  • The POR sequence for the MT28FW02GBBA1HPC-0AAT involves applying power to the device, waiting for the internal POR circuit to complete, and then releasing the reset signal. The datasheet provides more detailed information on the POR timing requirements.
  • The recommended method for erasing the entire MT28FW02GBBA1HPC-0AAT device is to use the Chip Erase command (60h) followed by the Erase Suspend command (B0h) to ensure that all blocks are erased.
  • The write protection feature on the MT28FW02GBBA1HPC-0AAT can be controlled using the Write Protect (WP) pin. When the WP pin is low, the device is write-protected, and when it is high, the device is writable.
  • The recommended method for reading the device ID and manufacturer ID on the MT28FW02GBBA1HPC-0AAT is to use the Read ID command (90h) and the Read Manufacturer ID command (E0h) respectively.

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MT28FW02GBBA1HPC-0AAT Overview

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