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MT29F4G08ABADAWP-IT:DTR - Micron

Description: FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 48-TSOP I

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MT29F4G08ABADAWP-IT:DTR - Micron PCB footprint - Small Outline Packages - Small Outline Packages - 48-Pin TSOP – Type 1, CPL_2022
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MT29F4G08ABADAWP-IT:DTR - Micron  - 3D model - Small Outline Packages - 48-Pin TSOP – Type 1, CPL_2022
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MT29F4G08ABADAWP-IT:DTR Details

  • Manufacturer Part Number:

    MT29F4G08ABADAWP-IT:DTR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    TSOP1-48

  • ECCN Code:

    3A991.B.1.A

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    1

  • Data Retention Time-Min:

    10

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PDSO-G48

  • JESD-609 Code:

    e3

  • Length:

    18.4 mm

  • Memory Density:

    4294967296 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    48

  • Number of Words:

    536870912 words

  • Number of Words Code:

    512000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    512MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSOP1

  • Package Equivalence Code:

    TSSOP48,.8,20

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    3.3 V

  • Seated Height-Max:

    1.2 mm

  • Standby Current-Max:

    0.0001 A

  • Supply Current-Max:

    0.035 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Type:

    SLC NAND TYPE

  • Width:

    12 mm

  • Write Cycle Time-Max (tWC):

    0.00002 ms

  • Write Protection:

    HARDWARE

MT29F4G08ABADAWP-IT:DTR Frequently Asked Questions (FAQs)

  • The maximum number of program/erase cycles for the MT29F4G08ABADAWP-IT:DTR is 3,000 cycles, as specified in the Micron Technology Inc. datasheet.
  • The device has an internal power-on reset (POR) circuit that resets the device when power is applied. No external reset circuit is required. However, it is recommended to add an external capacitor to the VCC pin to ensure a clean power-up sequence.
  • The recommended operating temperature range for the MT29F4G08ABADAWP-IT:DTR is -40°C to 85°C. However, it can operate in an extended temperature range of -40°C to 105°C with reduced performance and reliability.
  • The MT29F4G08ABADAWP-IT:DTR has built-in error correction and detection capabilities. It uses a BCH (Bose-Chaudhuri-Hocquenghem) error correction code to detect and correct errors. The device also has a cyclic redundancy check (CRC) feature to detect errors.
  • The MT29F4G08ABADAWP-IT:DTR has a read latency of 25ns and a write latency of 250ns. The device's throughput is up to 50MB/s for sequential reads and up to 20MB/s for sequential writes.

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MT29F4G08ABADAWP-IT:DTR Overview

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