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MT29F4G08ABBDAH4:D - Micron

Description: SLC NAND Flash Parallel 1.8V 4G-bit 512M x 8 63-Pin VFBGA

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MT29F4G08ABBDAH4:D - Micron PCB footprint - BGA - BGA - 63-Ball VFBGA (9mm x 11mm)_
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MT29F4G08ABBDAH4:D - Micron  - 3D model - BGA - 63-Ball VFBGA (9mm x 11mm)_
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MT29F4G08ABBDAH4:D Details

  • Manufacturer Part Number:

    MT29F4G08ABBDAH4:D

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    1

  • Access Time-Max:

    25 ns

  • Command User Interface:

    YES

  • Data Polling:

    NO

  • JESD-30 Code:

    R-PBGA-B63

  • JESD-609 Code:

    e1

  • Length:

    11 mm

  • Memory Density:

    4294967296 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Sectors/Size:

    4K

  • Number of Terminals:

    63

  • Number of Words:

    536870912 words

  • Number of Words Code:

    512000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    70 °C

  • Organization:

    512MX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA63,10X12,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Page Size:

    2K words

  • Parallel/Serial:

    PARALLEL

  • Qualification Status:

    Not Qualified

  • Ready/Busy:

    YES

  • Seated Height-Max:

    1 mm

  • Sector Size:

    128K

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.02 mA

  • Supply Voltage-Max (Vsup):

    1.95 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    COMMERCIAL

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Toggle Bit:

    NO

  • Type:

    SLC NAND TYPE

  • Width:

    9 mm

MT29F4G08ABBDAH4:D Frequently Asked Questions (FAQs)

  • The MT29F4G08ABBDAH4:D has a minimum of 3,000 program/erase cycles, but this can vary depending on the specific use case and operating conditions.
  • The MT29F4G08ABBDAH4:D has a bad block management system that allows the device to detect and mark bad blocks. The host system can then avoid using these blocks to ensure data integrity.
  • The MT29F4G08ABBDAH4:D uses a page-based architecture, where data is read and written in pages of 4KB or 8KB. To optimize performance, it's recommended to use sequential writes and reads, and to use the device's built-in error correction mechanisms.
  • The MT29F4G08ABBDAH4:D has built-in mechanisms to ensure data retention and integrity, including error correction codes (ECC) and cyclic redundancy checks (CRC). It's also recommended to use wear leveling and garbage collection algorithms to ensure even wear across the device.
  • The MT29F4G08ABBDAH4:D has an active power consumption of 50mA (typical) and a standby power consumption of 10mA (typical). The device also has a low-power mode that can reduce power consumption to 5mA (typical).

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MT29F4G08ABBDAH4:D Overview

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