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MT29F64G08CFACBWP-12:C - Micron

Description: FLASH - NAND Memory IC 64Gb (8G x 8) Parallel 48-TSOP I

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PCB Footprints
MT29F64G08CFACBWP-12:C - Micron PCB footprint - Small Outline Packages - Small Outline Packages - 48 PIN TSOP TYPE 1 CPL (PACKAGE WP)
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3D Models
MT29F64G08CFACBWP-12:C - Micron  - 3D model - Small Outline Packages - 48 PIN TSOP TYPE 1 CPL (PACKAGE WP)
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MT29F64G08CFACBWP-12:C Details

  • Manufacturer Part Number:

    MT29F64G08CFACBWP-12:C

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    0

MT29F64G08CFACBWP-12:C Frequently Asked Questions (FAQs)

  • The maximum number of program/erase cycles for the MT29F64G08CFACBWP-12:C is 3,000 to 5,000 cycles, depending on the operating conditions and usage patterns.
  • The MT29F64G08CFACBWP-12:C has built-in error correction and detection mechanisms, including ECC (Error-Correcting Code) and CRC (Cyclic Redundancy Check). However, the specific implementation and handling of error correction and detection may vary depending on the system design and requirements.
  • The recommended operating temperature range for the MT29F64G08CFACBWP-12:C is -40°C to 85°C, with a maximum junction temperature of 125°C.
  • To ensure data retention and integrity, it is recommended to follow proper storage and handling procedures, including storing the devices in a cool, dry place, avoiding exposure to extreme temperatures, and using proper ESD protection. Additionally, implementing data redundancy and checksum mechanisms can help detect and correct data errors.
  • The typical power consumption for the MT29F64G08CFACBWP-12:C is around 20mA for read operations and 30mA for program/erase operations, with a standby current of around 10uA.

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MT29F64G08CFACBWP-12:C Overview

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