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MTP75N06HD - Motorola

Description: HDTMOS E-FET High Density Power Fet N-Channel Enhancement-Mode Silicon Gate

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PCB Footprints
MTP75N06HD - Motorola PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - CASE 221A–06 ISSUE Y_2023
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3D Models
MTP75N06HD - Motorola  - 3D model - Transistor Outline, Vertical - CASE 221A–06 ISSUE Y_2023
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MTP75N06HD Details

  • Manufacturer Part Number:

    MTP75N06HD

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Motorola Semiconductor Products

  • Avalanche Energy Rating (Eas):

    500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    252 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    150 W

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    225 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    269 ns

  • Turn-on Time-Max (ton):

    332 ns

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MTP75N06HD Overview

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