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MTW20N50E - onsemi

Description: Power MOSFET 20 Amps, 500 Volts N−Channel TO−247

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MTW20N50E - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - MTW20N50E
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MTW20N50E - onsemi  - 3D model - Transistor Outline, Vertical - MTW20N50E
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MTW20N50E Details

  • Manufacturer Part Number:

    MTW20N50E

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247AE

  • Package Description:

    CASE 340K-01, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    CASE 340K-01

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    HIGH VOLTAGE

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.24 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AE

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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