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MUR4100E - onsemi

Description: 20 mjoules Avalanche Energy Guaranteed; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Ultrafast 75 Nanosecond Recovery Time; 175°C Operating Junction Temperature; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction; Marking: MUR480E, MUR4100E; Polarity: Cathode Indicated by Polarity Band; Case: Epoxy, Molded; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Finish: All External Surfaces Corrosion Resistant and Termin

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MUR4100E - onsemi PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - MUR4100E
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MUR4100E - onsemi  - 3D model - Diodes, Axial Diameter Horizontal Mounting - MUR4100E
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MUR4100E Details

  • Manufacturer Part Number:

    MUR4100E

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    Axial Lead 9.65x5.33mm, 25.4x1.22mm Pkg, Lead len/dia

  • Package Description:

    CASE 267-05, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    267-05

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE, LOW LEAKAGE CURRENT

  • Application:

    ULTRA FAST RECOVERY POWER

  • Breakdown Voltage-Min:

    1000 V

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    DO-201AD

  • JESD-30 Code:

    O-PALF-W2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    70 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    4 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    1000 V

  • Reverse Current-Max:

    25 µA

  • Reverse Recovery Time-Max:

    0.1 µs

  • Reverse Test Voltage:

    1000 V

  • Surface Mount:

    NO

  • Technology:

    AVALANCHE

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

MUR4100E Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the MUR4100E is -55°C to 150°C.
  • To ensure proper biasing, connect the anode to a voltage source through a current-limiting resistor, and the cathode to a voltage sink or ground through a current-sensing resistor. Consult the datasheet for specific biasing requirements.
  • The maximum allowable voltage across the MUR4100E is 1000V, but it's recommended to operate within the specified voltage range for optimal performance and reliability.
  • To prevent electrostatic discharge (ESD) damage, handle the MUR4100E with ESD-protective equipment, such as wrist straps and mats, and ensure the workspace is ESD-safe.
  • Yes, the MUR4100E can be used in high-frequency applications up to 100 kHz, but be aware of the device's capacitance and inductance, which may affect performance at high frequencies.

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MUR4100E Overview

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Part Image MUR4100 Formosa Microsemi Co Ltd

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Part Image MUR4100 Galaxy Semi-Conductor Co Ltd

Rectifier Diode, 1 Phase, 1 Element, 4A, 1000V V(RRM), Silicon, DO-27,

Part Image MUR4100 Daco Semiconductor Co Ltd

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Part Image MUR4100-BP Micro Commercial Components

Rectifier Diode, 1 Phase, 1 Element, 4A, 1000V V(RRM), Silicon, DO-201AD

Part Image MUR480-BP Micro Commercial Components

Rectifier Diode, 1 Phase, 1 Element, 4A, 800V V(RRM), Silicon, DO-201AD

For a full list of alternate parts for MUR4100E, check out Findchips.com