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MUR4100ERLG - onsemi

Description: 20 mjoules Avalanche Energy Guaranteed; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Ultrafast 75 Nanosecond Recovery Time; 175°C Operating Junction Temperature; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction; Marking: MUR480E, MUR4100E; Polarity: Cathode Indicated by Polarity Band; Case: Epoxy, Molded; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Finish: All External Surfaces Corrosion Resistant and Termin

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PCB Footprints
MUR4100ERLG - onsemi PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - AXIAL-LEAD-CASE 267-05
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3D Models
MUR4100ERLG - onsemi  - 3D model - Diodes, Axial Diameter Horizontal Mounting - AXIAL-LEAD-CASE 267-05
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MUR4100ERLG Details

  • Manufacturer Part Number:

    MUR4100ERLG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    Axial Lead 9.65x5.33mm, 25.4x1.22mm Pkg, Lead len/dia

  • Package Description:

    CASE 267-05, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    267-05

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    6.07

  • Additional Feature:

    FREE WHEELING DIODE, LOW LEAKAGE CURRENT

  • Application:

    ULTRA FAST RECOVERY POWER

  • Breakdown Voltage-Min:

    1000 V

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    DO-201AD

  • JESD-30 Code:

    O-PALF-W2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    70 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    4 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    1000 V

  • Reverse Current-Max:

    25 µA

  • Reverse Recovery Time-Max:

    0.1 µs

  • Reverse Test Voltage:

    1000 V

  • Surface Mount:

    NO

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

MUR4100ERLG Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the MUR4100ERLG is -55°C to 150°C, although the datasheet only specifies a storage temperature range.
  • To ensure proper soldering, use a soldering iron with a temperature of 250°C to 270°C, and apply a small amount of solder paste to the pads. Avoid overheating the component, and use a soldering technique that minimizes thermal stress.
  • The maximum allowable voltage that can be applied to the MUR4100ERLG is 1000V, although the datasheet only specifies a maximum repetitive reverse voltage of 400V.
  • Handle the MUR4100ERLG in an ESD-protected environment, wear an ESD wrist strap or use ESD-safe tools, and avoid touching the component's pins or leads to prevent ESD damage.
  • Yes, the MUR4100ERLG can be used in high-frequency applications up to 100 kHz, but be aware of the component's parasitic capacitance and inductance, which may affect its performance at high frequencies.

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MUR4100ERLG Overview

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Part Image MUR4100ERL onsemi

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 1000V V(RRM), Silicon, DO-201AD