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MUR8100EG - onsemi

Description: Weight: 1.9 grams (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; 20 mjoules Avalanche Energy Guaranteed; High Temperature Glass Passivated Junction; Ultrafast 75 Nanosecond Recovery Time; Low Leakage Current; Marking: U880E, U8100E; Reverse Voltage to 1000 Volts Mechanical Characteristics:; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Low Forward Voltage; Lead Temperature for Soldering Purposes: 260°C Max

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PCB Footprints
MUR8100EG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221B-042
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3D Models
MUR8100EG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221B-042
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MUR8100EG Details

  • Manufacturer Part Number:

    MUR8100EG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AC 2 LEAD

  • Package Description:

    CASE 221B-04, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    221B-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.42

  • Additional Feature:

    FREE WHEELING DIODE, LOW LEAKAGE CURRENT

  • Application:

    ULTRA FAST RECOVERY POWER

  • Breakdown Voltage-Min:

    1000 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.5 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    8 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    1000 V

  • Reverse Current-Max:

    25 µA

  • Reverse Recovery Time-Max:

    0.1 µs

  • Reverse Test Voltage:

    1000 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

MUR8100EG Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the MUR8100EG is -55°C to 150°C.
  • To ensure proper biasing, connect the anode to a voltage source through a current-limiting resistor, and connect the cathode to a voltage source or ground through a current-limiting resistor. Consult the datasheet for specific biasing requirements.
  • The maximum allowable current for the MUR8100EG is 10A. Exceeding this current may cause damage to the device.
  • To prevent electrostatic discharge (ESD) damage, handle the MUR8100EG with an anti-static wrist strap or mat, and ensure that all equipment and tools are properly grounded.
  • Yes, the MUR8100EG can be used in switching power supply applications due to its fast switching times and low forward voltage drop.

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MUR8100EG Overview

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Part Image MUR8100E Fairchild Semiconductor Corporation

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