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MURD550PFT4G - onsemi

Description: 520V Rating Meets 80% Derating Requirements of Major OEMs; Low Forward Voltage Drop; Low Leakage; Ultrafast 95 Nanosecond Recovery Time; Reduces Forward Conduction Loss Mechanical ; Case: Epoxy, Molded; Epoxy Meets UL 94 V-0 @ 0.125 in; Weight: MUR550APF: 1.1 Gram (Approximately) MUR550PF: 1.9 Gram ; AEC-Q101 Qualified and PPAP Capable; NRVUD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

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MURD550PFT4G - onsemi - PCB symbol
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PCB Footprints
MURD550PFT4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F
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3D Models
MURD550PFT4G - onsemi - 3D model - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F
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MURD550PFT4G Details

  • Manufacturer Part Number:

    MURD550PFT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China, Malaysia, Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    6.45

  • Additional Feature:

    LOW LEAKAGE CURRENT

  • Application:

    ULTRA FAST RECOVERY

  • Breakdown Voltage-Min:

    520 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.98 V

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    75 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    520 V

  • Reverse Current-Max:

    5 µA

  • Reverse Recovery Time-Max:

    0.095 µs

  • Reverse Test Voltage:

    520 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

MURD550PFT4G Frequently Asked Questions (FAQs)

  • A good PCB layout for the MURD550PFT4G should prioritize thermal dissipation. Ensure the device is placed near a thermal pad or a heat sink, and use thermal vias to dissipate heat efficiently. A 2-3 layer PCB with a solid ground plane is recommended.
  • To ensure reliable operation across the full temperature range (-55°C to 175°C), follow the recommended operating conditions, and consider the device's thermal characteristics. Implement proper thermal management, and ensure the device is not exposed to excessive voltage or current stress.
  • When handling the MURD550PFT4G, it's essential to follow proper ESD protection procedures to prevent damage. Use an ESD wrist strap or mat, and ensure the workspace is ESD-safe. Avoid touching the device's pins or handling it in a way that could generate static electricity.
  • The gate resistor value depends on the specific application and the required switching frequency. A general guideline is to use a resistor value between 10 ohms and 100 ohms. However, it's recommended to consult the application note or consult with an onsemi representative for specific guidance.
  • The MURD550PFT4G's high voltage rating (550V) requires careful system design to ensure safe and reliable operation. Ensure the device is used within its recommended operating conditions, and consider the voltage rating when selecting components and designing the system's power supply.

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MURD550PFT4G Overview

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