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MURS160T3 - onsemi

Description: Obsolete - 50 V, 2 A Ultrafast Rectifier

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MURS160T3 - onsemi PCB footprint - Diodes Moulded - Diodes Moulded - MURS160T3
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MURS160T3 - onsemi  - 3D model - Diodes Moulded - MURS160T3
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MURS160T3 Details

  • Manufacturer Part Number:

    MURS160T3

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SMB

  • Package Description:

    PLASTIC, CASE 403A-03, SMB, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    403A-03

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    HIGH VOLTAGE ULTRA FAST RECOVERY POWER

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.2 V

  • JEDEC-95 Code:

    DO-214AA

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    35 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    235

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Recovery Time-Max:

    0.075 µs

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MURS160T3 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the MURS160T3 is -55°C to 150°C.
  • To ensure proper biasing, connect the anode to a voltage source through a current-limiting resistor, and the cathode to ground through a current-sensing resistor. Consult the datasheet for specific biasing requirements.
  • The maximum allowable voltage for the MURS160T3 is 160V. Exceeding this voltage may result in device damage or failure.
  • To protect the MURS160T3 from EOS, use a voltage limiter or a transient voltage suppressor (TVS) in parallel with the device. Additionally, ensure proper PCB layout and design to minimize electromagnetic interference (EMI) and radio-frequency interference (RFI).
  • The typical reverse recovery time for the MURS160T3 is around 35ns. This value may vary depending on the specific application and operating conditions.

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MURS160T3 Overview

Use the download button to access the MURS160T3 schematic symbol, PCB footprint, and 3D model.
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Part Image NRVUS160VT3G onsemi

Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon

Part Image MURS160HE3/52T Vishay Intertechnologies

Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA

Part Image MURS160HE3/5BT Vishay Intertechnologies

Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA

Part Image MUR160SHR5 Taiwan Semiconductor

Rectifier Diode, 1 Phase, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AA

Part Image MURS160/5 Vishay Semiconductors

Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA

For a full list of alternate parts for MURS160T3, check out Findchips.com