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MURS160T3G - onsemi

Description: Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Rectangular Package for Automated Handling; Case: Epoxy, Molded; Weight: 95 mg (approximately); Polarity: Polarity Band Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; High Temperature Glass Passivated Junction; These are PB-Free Packages; AEC-Q101 Qualif

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MURS160T3G - onsemi PCB footprint - Diodes Moulded - Diodes Moulded - SMB CASE 403A-03 ISSUE J
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MURS160T3G - onsemi  - 3D model - Diodes Moulded - SMB CASE 403A-03 ISSUE J
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MURS160T3G Details

  • Manufacturer Part Number:

    MURS160T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SMB

  • Pin Count:

    2

  • Manufacturer Package Code:

    403A-03

  • Country Of Origin:

    Mainland China, Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    1999-01-01

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    HIGH VOLTAGE ULTRA FAST RECOVERY POWER

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.2 V

  • JEDEC-95 Code:

    DO-214AA

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    35 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Recovery Time-Max:

    0.075 µs

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

MURS160T3G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the MURS160T3G is 10V to 30V, with a maximum voltage rating of 40V.
  • To ensure proper biasing, connect the gate to the source through a resistor (typically 1kΩ to 10kΩ) and apply a voltage between 10V to 30V to the drain. The gate-source voltage (Vgs) should be between -2V to 2V for optimal performance.
  • The maximum current rating for the MURS160T3G is 16A, with a pulsed current rating of 32A.
  • To protect the MURS160T3G from overvoltage and overcurrent conditions, use a voltage regulator or a zener diode to limit the voltage, and consider adding a current-sensing resistor and a fuse or a current limiter to prevent overcurrent conditions.
  • The thermal resistance (RθJA) of the MURS160T3G is 62°C/W, and the thermal resistance (RθJC) is 4°C/W.

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MURS160T3G Overview

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Part Image MUR160SH Taiwan Semiconductor

Rectifier Diode, 1 Phase, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AA

Part Image MURS160HE3_A/I Vishay Intertechnologies

Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA

Part Image MURS160HE3/52T Vishay Intertechnologies

Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA

Part Image MURS160HE3/5BT Vishay Intertechnologies

Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA

Part Image MURS160HE3/5BT Vishay Semiconductors

DIODE 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

For a full list of alternate parts for MURS160T3G, check out Findchips.com