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MURS1JBL-TP - MCC

Description: Super Fast Recovery Rectifiers

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PCB Footprints
MURS1JBL-TP - MCC PCB footprint - Diodes Moulded - Diodes Moulded - DO-214AA (SMB) (Lead Frame)_2021
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3D Models
MURS1JBL-TP - MCC  - 3D model - Diodes Moulded - DO-214AA (SMB) (Lead Frame)_2021
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MURS1JBL-TP Details

  • Manufacturer Part Number:

    MURS1JBL-TP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2016-12-26

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    7

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.25 V

  • JEDEC-95 Code:

    DO-214AA

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    35 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    5 µA

  • Reverse Recovery Time-Max:

    0.05 µs

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

MURS1JBL-TP Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the MURS1JBL-TP is -55°C to 150°C.
  • Yes, the MURS1JBL-TP is a high-speed diode with a switching time of 4ns, making it suitable for high-frequency applications up to 1 GHz.
  • The maximum surge current rating for the MURS1JBL-TP is 150 A for a 10/1000 μs waveform.
  • No, the MURS1JBL-TP is not a radiation-hardened device. It is not designed for use in high-radiation environments.
  • The typical junction capacitance of the MURS1JBL-TP is 120 pF.

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MURS1JBL-TP Overview

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Part Image FR1J-13 Diodes Incorporated

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