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MURS220T3G - onsemi

Description: Small Compact Surface Mountable Package with J-Bend Leads; Marking: U2D; Polarity: Polarity Band Indicates Cathode Lead; Shipped in 12 mm Tape and Reel, 2500 units per reel; Weight: 95 mg (approximately); High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.77 Volts Max @ 2.0 A, TJ = 150?C) Mechanical Characteristics:; Rectangular Package for Automated Handling; Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable; Case: Epoxy, Molded; Lead and Mounti

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MURS220T3G - onsemi PCB footprint - Diodes Moulded - Diodes Moulded - SMB CASE 403A-03
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MURS220T3G - onsemi  - 3D model - Diodes Moulded - SMB CASE 403A-03
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MURS220T3G Details

  • Manufacturer Part Number:

    MURS220T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SMB

  • Pin Count:

    2

  • Manufacturer Package Code:

    403A-03

  • Country Of Origin:

    Mainland China, Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    HIGH VOLTAGE ULTRA FAST RECOVERY POWER

  • Breakdown Voltage-Min:

    200 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.95 V

  • JEDEC-95 Code:

    DO-214AA

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    40 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    200 V

  • Reverse Current-Max:

    2 µA

  • Reverse Recovery Time-Max:

    0.035 µs

  • Reverse Test Voltage:

    200 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

MURS220T3G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness is recommended for the thermal pad, and it should be connected to a large copper area to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -55°C to 150°C. Also, consider the power dissipation and thermal resistance of the device when designing the system.
  • The MURS220T3G has an internal ESD protection diode, but it is still recommended to follow proper ESD handling procedures during assembly and handling. A human body model (HBM) of 2 kV and a machine model (MM) of 200 V are recommended.
  • Yes, the MURS220T3G is suitable for high-reliability applications. It is manufactured using a high-reliability process and is screened to ensure high reliability. However, it is recommended to follow proper derating and qualification procedures for the specific application.
  • The maximum allowable power dissipation can be determined by calculating the maximum junction temperature (TJ) and using the thermal resistance (RθJA) and power dissipation (PD) equations provided in the datasheet.

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MURS220T3G Overview

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Part Image MURS220T3 onsemi

Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AA