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NAND256W3A2BZA6E - STMicroelectronics

Description: FLASH - NAND Memory IC 256Mbit Parallel 50 ns 55-VFBGA (8x10)

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NAND256W3A2BZA6E - STMicroelectronics PCB footprint - BGA - BGA - VFBGA55
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NAND256W3A2BZA6E - STMicroelectronics  - 3D model - BGA - VFBGA55
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NAND256W3A2BZA6E Details

  • Manufacturer Part Number:

    NAND256W3A2BZA6E

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    BGA

  • Package Description:

    8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55

  • Pin Count:

    55

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    STMicroelectronics

  • Access Time-Max:

    12000 ns

  • Command User Interface:

    YES

  • Data Polling:

    NO

  • JESD-30 Code:

    R-PBGA-B55

  • JESD-609 Code:

    e1

  • Length:

    10 mm

  • Memory Density:

    268435456 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Sectors/Size:

    2K

  • Number of Terminals:

    55

  • Number of Words:

    33554432 words

  • Number of Words Code:

    32000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    32MX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA55,8X12,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Page Size:

    512 words

  • Parallel/Serial:

    PARALLEL

  • Programming Voltage:

    3 V

  • Qualification Status:

    Not Qualified

  • Ready/Busy:

    YES

  • Seated Height-Max:

    1.05 mm

  • Sector Size:

    16K

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.02 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Toggle Bit:

    NO

  • Type:

    SLC NAND TYPE

  • Width:

    8 mm

NAND256W3A2BZA6E Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the NAND256W3A2BZA6E is -40°C to 85°C.
  • Bad block management is typically handled by the firmware or software layer. The NAND256W3A2BZA6E does not have built-in bad block management. You can use techniques like error correction codes, checksums, and wear leveling to manage bad blocks.
  • The maximum number of program/erase cycles for the NAND256W3A2BZA6E is 3,000 to 5,000 cycles, depending on the specific application and usage.
  • Wear leveling can be implemented using techniques like dynamic wear leveling, static wear leveling, or a combination of both. You can use algorithms that distribute write operations evenly across the entire memory to minimize wear on individual blocks.
  • The recommended power-on sequence for the NAND256W3A2BZA6E is to apply VCC first, followed by VPP, and then the clock signal. This ensures proper initialization and prevents damage to the device.

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NAND256W3A2BZA6E Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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