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NCV20072DMR2G - onsemi

Description: Rail−To−Rail Output; Wide Supply Range: 2.7 V to 36 V; Wide Bandwidth: 3 MHz typical at VS = 2.7 V; High Slew Rate: 2.8 V/µs typical at VS = 2.7 V; Low Supply Current: 405 µA per channel at VS = 2.7 V; Low Input Bias Current: 5 pA typical; Wide Temperature Range: −40°C to 125°C; NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable

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NCV20072DMR2G Details

  • Manufacturer Part Number:

    NCV20072DMR2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    Micro8

  • Manufacturer Package Code:

    846A-02

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.33.00.01

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.82

  • Amplifier Type:

    OPERATIONAL AMPLIFIER

  • Average Bias Current-Max (IIB):

    0.0015 µA

  • Common-mode Reject Ratio-Nom:

    125 dB

  • Input Offset Voltage-Max:

    4000 µV

  • JESD-30 Code:

    S-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    3 mm

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    2

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSSOP

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

  • Peak Reflow Temperature (Cel):

    260

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    1.1 mm

  • Slew Rate-Nom:

    2.7 V/us

  • Supply Voltage Limit-Max:

    40 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Unity Gain BW-Nom:

    3200

  • Width:

    3 mm

NCV20072DMR2G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing the device near a thermal pad or a heat sink, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range, use a heat sink or thermal pad, and consider using a thermal interface material to improve heat transfer.
  • Exceeding the maximum junction temperature can lead to reduced device lifespan, decreased performance, and potentially even device failure. It is essential to ensure that the device operates within its specified temperature range.
  • To protect the device from electrical overstress (EOS), use a transient voltage suppressor (TVS) or a zener diode to clamp voltage transients, and ensure that the device is operated within its specified voltage range.
  • To minimize EMI and RFI, use a shielded enclosure, keep the device away from antennas and other EMI sources, and use EMI filters or shielding materials to reduce radiation.

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NCV20072DMR2G Overview

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Part Image NCS20072DMR2G onsemi

Operational Amplifier, 2 Func, 4000uV Offset-Max, CMOS, PDSO8