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NCV33152DR2G - onsemi

Description: Output Rise and Fall Times of 15 ns with 1000 pF Load; CMOS/LSTTL Compatible Inputs with Hysteresis; Low Standby Current; Two Independent Channels with 1.5 A Totem Pole Outputs; Undervoltage Lockout with Hysteresis; Efficient High Frequency Operation; Enhanced System Performance with Common Switching Regulator Control ICs; Pb-Free Packages are Available

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NCV33152DR2G - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC-8 NB
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NCV33152DR2G - onsemi  - 3D model - Small Outline Packages - SOIC-8 NB
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NCV33152DR2G Details

  • Manufacturer Part Number:

    NCV33152DR2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8 Narrow Body

  • Package Description:

    SOIC-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    751-07

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • High Side Driver:

    YES

  • Input Characteristics:

    GATED SCHMITT TRIGGER

  • Interface IC Type:

    BUFFER OR INVERTER BASED MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    4.9 mm

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    2

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    STANDARD

  • Output Peak Current Limit-Nom:

    1.5 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    1.75 mm

  • Supply Current-Max:

    15 mA

  • Supply Voltage-Max:

    18 V

  • Supply Voltage-Min:

    6.5 V

  • Supply Voltage-Nom:

    12 V

  • Surface Mount:

    YES

  • Technology:

    BIPOLAR

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Turn-off Time:

    0.12 µs

  • Turn-on Time:

    0.12 µs

  • Width:

    3.9 mm

NCV33152DR2G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the exposed pad to the ground plane. This helps to dissipate heat efficiently.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, ensure good thermal design, and consider derating the device's power handling capabilities at higher temperatures.
  • The NCV33152DR2G has built-in ESD protection, but it's still important to follow proper ESD handling procedures during manufacturing and assembly to prevent damage. Additionally, consider adding external ESD protection devices if the device will be exposed to harsh environments.
  • Yes, the NCV33152DR2G is AEC-Q100 qualified, making it suitable for automotive applications. However, it's essential to review the device's specifications and ensure it meets the specific requirements of your high-reliability or automotive application.
  • When paralleling multiple NCV33152DR2G devices, ensure that each device has its own separate heat sink and thermal management. Also, consider the current sharing and balancing between devices to prevent overheating or uneven stress.

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Part Image NCV33152DR2 onsemi

Buffer/Inverter Based MOSFET Driver, 1.5A, BIPolar, PDSO8