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NCV57001DWR2G - onsemi

Description: High Current Output(+4/-6 A) at IGBT Miller Plateau Voltages; Short Propagation Delays with Accurate Matching; DESAT with Soft Turn Off; Active Miller Clamp and Negative Gate Voltage; High Transient & Electromagnetic Immunity; 5 kV Galvanic Isolation

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NCV57001DWR2G - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC-16 WB CASE 751G-03 ISSUE D
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NCV57001DWR2G - onsemi  - 3D model - Small Outline Packages - SOIC-16 WB CASE 751G-03 ISSUE D
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NCV57001DWR2G Details

  • Manufacturer Part Number:

    NCV57001DWR2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-16W

  • Package Description:

    SOIC-16

  • Manufacturer Package Code:

    751G-03

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    22 Weeks

  • Date Of Intro:

    2019-03-04

  • Manufacturer:

    onsemi

  • YTEOL:

    8

  • Additional Feature:

    UNDERVOLTAGE LOCKOUT

  • High Side Driver:

    YES

  • Input Characteristics:

    GATED

  • Interface IC Type:

    BUFFER OR INVERTER BASED IGBT DRIVER

  • JESD-30 Code:

    R-PDSO-G16

  • Length:

    10.3 mm

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    16

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    STANDARD

  • Output Peak Current Limit-Nom:

    7.8 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP16,.4

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    2.65 mm

  • Supply Current-Max:

    6 mA

  • Supply Voltage-Max:

    24 V

  • Supply Voltage-Nom:

    15 V

  • Supply Voltage1-Max:

    5.5 V

  • Supply Voltage1-Min:

    3.3 V

  • Supply Voltage1-Nom:

    5 V

  • Surface Mount:

    YES

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Turn-off Time:

    0.09 µs

  • Turn-on Time:

    0.09 µs

  • Width:

    7.5 mm

NCV57001DWR2G Frequently Asked Questions (FAQs)

  • A good thermal design should include a solid ground plane, thermal vias under the device, and a heat sink if possible. The datasheet provides some guidelines, but a more detailed application note is available from onsemi.
  • To ensure reliable start-up and shutdown, it's essential to follow the recommended power-up and power-down sequences, and to ensure that the input voltage rises and falls monotonically. A soft-start circuit can also be used to reduce inrush current.
  • To minimize EMI, use a common-mode choke, and ensure that the PCB layout is designed to minimize loop areas and radiation. Shielding can be achieved using a metal can or a shielded enclosure. onsemi provides application notes on EMI design considerations.
  • To minimize standby power consumption, ensure that the device is in shutdown mode when not in use, and use a low-standby-power mode if available. Additionally, optimize the external component selection and PCB design to minimize power consumption.
  • Monitor the output voltage, current, and temperature to detect faults such as overvoltage, undervoltage, overcurrent, and overheating. The device has built-in protection features, but additional external monitoring may be required depending on the application.

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