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NCV8415STT1G - onsemi

Description: Short Circuit Protection with In-Rush Current Management; Thermal Shutdown with Automatic Restart; Delta Thermal Shutdown; Overvoltage Protection; Integrated Clamp for Overvoltage Protection and Inductive Switching; ESD Protection; dV/dt Robustness; Analog Drive Capability (Logic Level Input); NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Grade 1 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

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PCB Footprints
NCV8415STT1G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT−223 (TO−261) CASE 318E−04 ISSUE R
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NCV8415STT1G - onsemi  - 3D model - SOT223 (3-Pin) - SOT−223 (TO−261) CASE 318E−04 ISSUE R
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NCV8415STT1G Details

  • Manufacturer Part Number:

    NCV8415STT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223-4 / TO-261-4D

  • Manufacturer Package Code:

    0.0318

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    88 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    42 V

  • Drain-source On Resistance-Max:

    0.12 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.2 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    90000 ns

  • Turn-on Time-Max (ton):

    20000 ns

NCV8415STT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the IC, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the IC and connect it to a heat sink or a thermal plane.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal conductivity between the IC and the heat sink. Additionally, consider using thermal interface materials and ensure that the PCB is designed to withstand high temperatures.
  • The recommended input capacitors are 10uF to 22uF X7R or X5R ceramic capacitors, and the recommended output capacitors are 10uF to 22uF X7R or X5R ceramic capacitors. The capacitor values may vary depending on the specific application and operating conditions.
  • To protect the device from overvoltage and undervoltage conditions, consider using overvoltage protection (OVP) and undervoltage protection (UVP) circuits. These circuits can be implemented using external components such as zener diodes, resistors, and comparators.
  • The recommended startup sequence for this device involves applying the input voltage (VIN) first, followed by the enable signal (EN). This ensures that the internal voltage regulators are properly initialized and the device operates correctly.

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NCV8415STT1G Overview

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