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- Part Number NCV887000D1R2G
- Manufacturer onsemi
- Pin Count 8
- Part Category Integrated Circuit
- Package Category Small Outline Packages
- Footprint Name Small Outline Packages - SOIC-8 NB CAST 751-07
- Released Date Aug 25, 2015
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
NCV887000D1R2G Details
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Manufacturer Part Number:
NCV887000D1R2G
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Brand Name:
ON Semiconductor
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Pbfree Code:
Yes
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Rohs Code:
Yes
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Part Life Cycle Code:
Obsolete
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Part Package Code:
SOIC
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Package Description:
SOIC-8
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Pin Count:
8
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Manufacturer Package Code:
751-07
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ECCN Code:
EAR99
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HTS Code:
8542.39.00.60
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Manufacturer:
onsemi
NCV887000D1R2G Frequently Asked Questions (FAQs)
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A good PCB layout for optimal thermal performance involves placing the device near a thermal pad or a heat sink, and ensuring good thermal conductivity between the device and the PCB. A 2-layer or 4-layer PCB with a solid ground plane is recommended. Avoid placing thermal vias under the device, and keep the thermal pad clear of any obstacles.
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To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (up to 150°C for the NCV887000D1R2G). Implement proper thermal management, such as heat sinks or thermal interfaces, and ensure good airflow around the device. Also, consider derating the device's power handling capabilities at higher temperatures.
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The recommended soldering conditions for the NCV887000D1R2G are: peak temperature of 260°C, soldering time of 10-30 seconds, and a soldering iron temperature of 350-370°C. It's also recommended to use a solder with a melting point of 217-220°C.
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To handle ESD protection for the NCV887000D1R2G, ensure that the device is handled and stored in an ESD-protected environment. Use ESD-protective packaging, wrist straps, and mats, and follow proper ESD-handling procedures. Also, consider adding ESD-protection components, such as TVS diodes or ESD-protection ICs, to the PCB design.
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The power MOSFET structure of the NCV887000D1R2G affects its performance in several ways. The device's low RDS(on) and high current handling capabilities are due to its power MOSFET structure. However, this structure also makes the device more susceptible to parasitic inductance and capacitance, which can affect its high-frequency performance. Proper PCB layout and component selection can help mitigate these effects.
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NCV887000D1R2G Overview
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