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NDF06N60ZG - onsemi

Description: Obsolete - Power MOSFET 600V 7.1A 1.2 Ohm Single N-Channel TO-220FP

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PCB Footprints
NDF06N60ZG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221AH ISSUE F
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3D Models
NDF06N60ZG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221AH ISSUE F
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NDF06N60ZG Details

  • Manufacturer Part Number:

    NDF06N60ZG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD FULLPAK

  • Package Description:

    FULL PACK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    221AH

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    113 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    7.1 A

  • Drain-source On Resistance-Max:

    1.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    28 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

NDF06N60ZG Frequently Asked Questions (FAQs)

  • The maximum SOA for the NDF06N60ZG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's operation to a maximum junction temperature of 150°C and a maximum drain-source voltage of 60V.
  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is low (typically <10 ohms). Also, consider using a gate driver IC or a dedicated gate drive circuit to provide a fast rise and fall time (<10ns) and a high current capability (>1A).
  • For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Ensure good thermal conduction by applying a thermal interface material (TIM) between the device and the heat sink. A heat sink with a thermal resistance of <1°C/W is recommended.
  • Yes, the NDF06N60ZG is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly driven and the PCB layout is optimized for high-frequency operation. Also, consider the device's parasitic capacitances and inductances when designing the circuit.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage conditions. For overcurrent protection, consider using a current sense resistor and a comparator or an overcurrent protection IC. Also, ensure that the device is properly heatsinked and thermally managed.

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NDF06N60ZG Overview

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