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NDS9407 - onsemi

Description: RDS(ON) = 150 mΩ @ VGS = -10V; RDS(ON) = 240 mΩ @ VGS = -4.5V ; High performance trench technology for extremelylow RDS(ON); -3.0A, -60V; Fast switching speed; Low gate charge; High power and current handling capability

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NDS9407 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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NDS9407 - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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NDS9407 Details

  • Manufacturer Part Number:

    NDS9407

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDS9407 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature (TJ) and ensure it stays within the recommended range.
  • Use a shielded enclosure, keep the device away from antennas and high-frequency circuits, and ensure proper grounding and decoupling. Implement EMI filters and shielding on the PCB if necessary.
  • Use a low-ESR capacitor (e.g., ceramic or film capacitor) for power supply decoupling. Ensure a stable input voltage, and consider adding a voltage regulator or a power supply filter if necessary.
  • Use a 4-wire Kelvin connection for accurate voltage and current measurements. Ensure the test equipment is properly calibrated, and use a shielded cable to minimize noise and interference.

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NDS9407 Overview

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Part Image NDS9407 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NDS9407/L86Z Texas Instruments

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Part Image NDS9407/L99Z Texas Instruments

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Part Image NDS9407/S62Z Texas Instruments

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Part Image NDS9407_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for NDS9407, check out Findchips.com