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NIV1161MTWTAG - onsemi

Description: Low Capacitance (0.65 pF Typical, I/O to GND); Diode Capacitance Matching Between I/O’s: 1% Typical; Optimized Layout; Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4); Low ESD Clamping Voltage; Short-to-Battery Blocking; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; NIV1161MTWTAG Wettable Flank Package; NIV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

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PCB Footprints
NIV1161MTWTAG - onsemi PCB footprint - Other - Other - WDFNW6 2.0x2.2, 0.65P CASE 515AK ISSUE A
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3D Models
NIV1161MTWTAG - onsemi  - 3D model - Other - WDFNW6 2.0x2.2, 0.65P CASE 515AK ISSUE A
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NIV1161MTWTAG Details

  • Manufacturer Part Number:

    NIV1161MTWTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    WDFNW6 2.0x2.2, 0.65P

  • Package Description:

    DFN-6

  • Manufacturer Package Code:

    515AK

  • HTS Code:

    8542.39.00.01

  • Date Of Intro:

    2020-05-27

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • JESD-30 Code:

    R-PDSO-N6

  • JESD-609 Code:

    e3

  • Length:

    2.2 mm

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Peak Reflow Temperature (Cel):

    260

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    0.8 mm

  • Surface Mount:

    YES

  • Telecom IC Type:

    GAS DISCHARGE TUBE SUPPRESSOR

  • Temperature Grade:

    MILITARY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    2 mm

NIV1161MTWTAG Frequently Asked Questions (FAQs)

  • A good PCB layout should ensure minimal thermal resistance, use thermal vias, and keep the device away from heat sources. A heat sink or thermal pad can be used to improve heat dissipation. Refer to onsemi's application notes and thermal management guidelines for more information.
  • Follow onsemi's EMC guidelines, use proper shielding, and ensure good PCB layout practices. Use a common mode choke or ferrite bead to reduce EMI. Additionally, consider using a shielded inductor and a low-ESR capacitor to minimize radiated emissions.
  • Choose an inductor with a high saturation current, low DC resistance, and a suitable inductance value. Ensure the inductor is rated for the maximum output current and has a high self-resonant frequency. Consult onsemi's inductor selection guide for more information.
  • Select an output capacitor with a low equivalent series resistance (ESR), high ripple current rating, and a suitable capacitance value. Consider using a ceramic or polymer capacitor with a voltage rating above the maximum output voltage. Refer to onsemi's capacitor selection guide for more information.
  • Place input and output capacitors close to the device, with short traces and minimal inductance. Ensure the capacitors are connected to the correct pins and are not shared with other components. Follow onsemi's layout guidelines and consider using a capacitor with a built-in EMI filter.

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NIV1161MTWTAG Overview

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