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NJV4030PT3G - onsemi

Description: Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
NJV4030PT3G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 -2020
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NJV4030PT3G - onsemi  - 3D model - SOT223 (3-Pin) - SOT-223 -2020
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NJV4030PT3G Details

  • Manufacturer Part Number:

    NJV4030PT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Package Description:

    TO-261, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    160 MHz

NJV4030PT3G Frequently Asked Questions (FAQs)

  • A good PCB layout for NJV4030PT3G involves keeping the input and output traces short and separate, using a solid ground plane, and placing decoupling capacitors close to the device. Additionally, it's recommended to use a shielded inductor and to keep the switching node (pin 5) away from sensitive nodes.
  • To ensure stability, make sure to use a minimum output capacitance of 10uF, and a maximum ESR of 1 ohm. Also, ensure that the input voltage is within the recommended range, and that the device is operated within the recommended temperature range.
  • The maximum ambient temperature for NJV4030PT3G is 85°C, but it's recommended to derate the device's power dissipation at higher temperatures to ensure reliable operation.
  • Yes, NJV4030PT3G is a high-reliability device, with a failure rate of < 10 FIT (failures per 10^9 hours) at 40°C. However, it's recommended to follow proper design and manufacturing guidelines to ensure the device operates within its specifications.
  • The power dissipation of NJV4030PT3G can be calculated using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current. Make sure to consider the device's thermal resistance and maximum junction temperature when calculating the power dissipation.

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NJV4030PT3G Overview

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Part Image NJV4030PT1G onsemi

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin