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NRTS30100MFST3G - onsemi

Description: High current density in SO8-FL (5x6) package; Lower forward voltage drop; Less leakage current; Higher avalanche energy

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PCB Footprints
NRTS30100MFST3G - onsemi PCB footprint - Other - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NRTS30100MFST3G - onsemi  - 3D model - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NRTS30100MFST3G Details

  • Manufacturer Part Number:

    NRTS30100MFST3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL,DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.38

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    GENERAL PURPOSE

  • Breakdown Voltage-Min:

    100 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.76 V

  • JESD-30 Code:

    R-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    350 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    30 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    100 µA

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

NRTS30100MFST3G Frequently Asked Questions (FAQs)

  • A good PCB layout should ensure minimal thermal resistance, use a solid ground plane, and keep high-current paths short. Thermal management involves using a heat sink, thermal interface material, and ensuring good airflow. Consult onsemi's application notes and thermal management guidelines for more information.
  • Choose a gate driver that can provide a high enough gate current (e.g., 1-2 A) and voltage (e.g., 10-15 V) to ensure fast switching times. Consider the driver's output impedance, rise/fall times, and ability to handle the MOSFET's input capacitance. Consult the gate driver's datasheet and onsemi's application notes for guidance.
  • The SOA limits are not explicitly stated in the datasheet, but can be estimated based on the MOSFET's voltage and current ratings. As a general rule, avoid operating the MOSFET at high voltage and high current simultaneously. Consult onsemi's application notes and SOA guidelines for more information.
  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the drain, gate, and source pins to prevent damage from electrostatic discharge. Ensure the protection devices are rated for the MOSFET's voltage and current capabilities. Consult onsemi's ESD protection guidelines and application notes for more information.
  • The reliability and lifetime of the NRTS30100MFST3G depend on various factors, including operating conditions, temperature, and quality of the PCB assembly. Consult onsemi's reliability and lifetime guidelines, as well as industry standards such as JEDEC and AEC-Q101, for more information.

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NRTS30100MFST3G Overview

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