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NRVB230LSFT1G - onsemi

Description: Guardring for Stress Protection; Low Forward Voltage Drop; 125 C Operating Junction Temperature; Epoxy Meets UL94, V-0; Package Designed for Optimal Automated Board Assembly; Cathode Lead Indicated by polarity Band; ESD Ratings, Machine Model = C, Human Body Model = 3B; Device Meets MSL 1 Requirements; Lead Finish: 100% Matte Sn (Tin); This is a Pb-Free Device

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NRVB230LSFT1G - onsemi PCB footprint - Small Outline Diode Flat Lead - Small Outline Diode Flat Lead - NRVB230LSFT1G-1
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NRVB230LSFT1G - onsemi  - 3D model - Small Outline Diode Flat Lead - NRVB230LSFT1G-1
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NRVB230LSFT1G Details

  • Manufacturer Part Number:

    NRVB230LSFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOD-123FL

  • Manufacturer Package Code:

    498-01

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.1

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    POWER

  • Breakdown Voltage-Min:

    30 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.43 V

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    40 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    30 V

  • Reverse Current-Max:

    1000 µA

  • Reverse Test Voltage:

    30 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

NRVB230LSFT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended temperature range (−40°C to 150°C). Use a heat sink or thermal pad to dissipate heat, and consider using a thermal interface material to improve heat transfer.
  • The maximum allowed voltage on the input pins is 5.5V. Exceeding this voltage may damage the device.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input lines to protect the device from electrostatic discharge. Follow proper handling and storage procedures to prevent ESD damage.
  • Power up the device in the following sequence: VCC, then VIN. Ensure that VCC is stable before applying VIN. A power-up sequence diagram is available in the application note.

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NRVB230LSFT1G Overview

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Part Image MBR230LSFT1G onsemi

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 30V V(RRM), Silicon