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NRVB8H100MFSWFT3G - onsemi

Description: New Package Provides Capability of Inspection and Probe After Board Mounting; Guardring for Stress Protection; Low Forward Voltage Drop; 175°C Operating Junction Temperature; Wettable Flacks Option Available; NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These are Pb−Free Devices

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NRVB8H100MFSWFT3G Details

  • Manufacturer Part Number:

    NRVB8H100MFSWFT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Manufacturer Package Code:

    507BA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    28 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.22

  • Additional Feature:

    LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.9 V

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    75 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    5

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    8 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    2 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

NRVB8H100MFSWFT3G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The device has built-in ESD protection diodes. However, it's still recommended to follow proper ESD handling procedures during assembly and use. For latch-up prevention, ensure that the device is not exposed to excessive voltage or current, and use a latch-up immune design.
  • Yes, the NRVB8H100MFSWFT3G is suitable for high-frequency switching applications. However, ensure that the device is properly bypassed, and the PCB layout is optimized for high-frequency operation.
  • The device is designed to meet high reliability standards. The MTBF (Mean Time Between Failures) is typically in the range of 10^6 to 10^7 hours, depending on the application and operating conditions.

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NRVB8H100MFSWFT3G Overview

Use the download button to access the NRVB8H100MFSWFT3G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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