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NRVTS10100EMFST1G - onsemi

Description: Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage; Fast Switching with Exceptional Temperature Stability; Low Power Loss and Lower Operating Temperature; Higher Efficiency for Achieving Regulatory Compliance; Low Thermal Resistance; High Surge Capability; These are PbFree and HalideFree Devices

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Symbol
NRVTS10100EMFST1G - onsemi - PCB symbol
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PCB Footprints
NRVTS10100EMFST1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_1
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3D Models
NRVTS10100EMFST1G - onsemi - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_1
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NRVTS10100EMFST1G Details

  • Manufacturer Part Number:

    NRVTS10100EMFST1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE, LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    100 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.72 V

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    200 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    5

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    50 µA

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

NRVTS10100EMFST1G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2oz copper thickness and a thermal relief pattern is recommended. Refer to the onsemi application note AND9393/D for more details.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator or a low-dropout regulator (LDO) is recommended to regulate the input voltage. A decoupling capacitor of 10uF or higher is recommended to filter out noise and ensure stable operation.
  • The NRVTS10100EMFST1G is rated for operation from -40°C to 150°C. However, the device may be operated at temperatures above 150°C for short periods of time, but this may affect the device's reliability and lifespan.
  • The device is sensitive to ESD. Handling the device by the body or using an ESD wrist strap is recommended. A minimum of 1kΩ resistance in series with the input and output pins is recommended to protect the device from ESD.
  • The device should be stored in a dry, cool place away from direct sunlight. The storage temperature should be between -40°C to 30°C, and the humidity should be below 60%. The device should be stored in its original packaging or in a shielded bag to prevent ESD damage.

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