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NRVTS12100EMFST1G - onsemi

Description: Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage; Fast Switching with Exceptional Temperature Stability; Low Power Loss and Lower Operating Temperature; Higher Efficiency for Achieving Regulatory Compliance; Low Thermal Resistance; High Surge Capability; These are PbFree and HalideFree Devices

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PCB Footprints
NRVTS12100EMFST1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_2
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NRVTS12100EMFST1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_2
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NRVTS12100EMFST1G Details

  • Manufacturer Part Number:

    NRVTS12100EMFST1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    70 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE, LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    100 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.73 V

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    200 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    5

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    12 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    55 µA

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

NRVTS12100EMFST1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
  • The NRVTS12100EMFST1G has built-in ESD protection diodes, but additional external protection may be necessary depending on the application. Follow proper PCB design and handling practices to prevent latch-up.
  • Yes, but ensure that the device is properly bypassed and decoupled, and that the PCB layout is optimized for high-frequency operation. Also, consider the device's switching characteristics and potential ringing effects.
  • Check the input voltage, output load, and feedback network for proper configuration. Verify that the device is properly bypassed and decoupled. Use an oscilloscope to inspect the output voltage waveform for signs of oscillation or instability.

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NRVTS12100EMFST1G Overview

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