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NRVUA120VT3G - onsemi

Description: Power Rectifier, Ultra-Fast Recovery, 1 A, 150 V

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PCB Footprints
NRVUA120VT3G - onsemi PCB footprint - Diodes Moulded - Diodes Moulded - SMA CASE 403D ISSUE J_2023
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3D Models
NRVUA120VT3G - onsemi  - 3D model - Diodes Moulded - SMA CASE 403D ISSUE J_2023
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NRVUA120VT3G Details

  • Manufacturer Part Number:

    NRVUA120VT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SMA-2

  • Package Description:

    SMA, 2 PIN

  • Manufacturer Package Code:

    403D-02

  • Country Of Origin:

    Mainland China, Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    HIGH VOLTAGE ULTRA FAST RECOVERY POWER

  • Breakdown Voltage-Min:

    200 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.875 V

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    40 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    200 V

  • Reverse Current-Max:

    2 µA

  • Reverse Recovery Time-Max:

    0.035 µs

  • Reverse Test Voltage:

    200 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

NRVUA120VT3G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the package to connect the thermal pad to the copper area.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Also, consider the power dissipation and thermal resistance of the package when designing the system.
  • The device has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A minimum of 2kV HBM (Human Body Model) and 200V MM (Machine Model) ESD protection is recommended.
  • Yes, the NRVUA120VT3G is suitable for high-reliability applications. It's manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design, assembly, and testing procedures to ensure the device operates within its specifications.
  • The optimal gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. A general guideline is to use a gate resistor value between 10Ω to 100Ω. However, it's recommended to consult the application note or contact onsemi support for specific guidance.

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NRVUA120VT3G Overview

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