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NRVUS120VT3G - onsemi

Description: Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 95 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Polarity: Polarity Band Indicate

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NRVUS120VT3G - onsemi - PCB symbol
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NRVUS120VT3G - onsemi PCB footprint - Diodes Moulded - Diodes Moulded - NRVUS120VT3G-
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NRVUS120VT3G - onsemi - 3D model - Diodes Moulded - NRVUS120VT3G-
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NRVUS120VT3G Details

  • Manufacturer Part Number:

    NRVUS120VT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SMB-2

  • Manufacturer Package Code:

    403A-03

  • Country Of Origin:

    Mainland China, Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    9 Weeks

  • Date Of Intro:

    2017-02-23

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    HIGH VOLTAGE ULTRA FAST RECOVERY POWER

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.875 V

  • JESD-30 Code:

    R-PDSO-J2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    40 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    200 V

  • Reverse Current-Max:

    2 µA

  • Reverse Recovery Time-Max:

    0.035 µs

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    J BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

NRVUS120VT3G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness is recommended for the thermal pad, and it should be connected to a solid ground plane to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Also, consider the power dissipation and thermal resistance of the device when designing the system.
  • The NRVUS120VT3G has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A human body model (HBM) of ±2 kV and a machine model (MM) of ±200 V are recommended.
  • Yes, the NRVUS120VT3G is suitable for high-reliability applications. It's manufactured using a high-reliability process and has undergone rigorous testing to ensure its quality and reliability.
  • The optimal gate resistor value depends on the specific application and the required switching frequency. A general guideline is to use a gate resistor value between 10 Ω and 100 Ω. However, it's recommended to consult the application note or contact onsemi support for specific guidance.

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NRVUS120VT3G Overview

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