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NRVUS1GFA - onsemi

Description: Low Power Loss, High Efficiency; Glass Passivated Chip Junction; Fast Switching Reverse Recovery Time: 50~75 ns Maximum; MSL 1 per J-STD-020; UL Flammability 94V-0 Classification; NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free and are RoHS Compliant

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NRVUS1GFA - onsemi PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - 4.06mmX2mm
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NRVUS1GFA - onsemi  - 3D model - Diodes, Axial Diameter Horizontal Mounting - 4.06mmX2mm
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NRVUS1GFA Details

  • Manufacturer Part Number:

    NRVUS1GFA

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOD-123 FL

  • Package Description:

    SOD-123FL, 2 PIN

  • Manufacturer Package Code:

    425AB

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2019-12-11

  • Manufacturer:

    onsemi

  • YTEOL:

    6.19

  • Additional Feature:

    LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    400 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.3 V

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    30 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    400 V

  • Reverse Current-Max:

    5 µA

  • Reverse Recovery Time-Max:

    0.05 µs

  • Reverse Test Voltage:

    400 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

NRVUS1GFA Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern are recommended. Refer to the onsemi application note AND9173/D for more details.
  • Ensure the device is operated within the recommended junction temperature (Tj) range of -40°C to 150°C. Implement proper thermal management, such as heat sinks or thermal interfaces, to maintain a safe operating temperature.
  • The NRVUS1GFA has built-in ESD protection diodes. However, it's still recommended to follow proper ESD handling procedures during assembly and testing. For latch-up prevention, ensure that the device is operated within the recommended voltage and current ranges, and avoid excessive voltage spikes or transients.
  • Yes, the NRVUS1GFA is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, ensure that the device is operated within the recommended specifications and that the system design meets the required reliability and safety standards.
  • Use a combination of visual inspection, voltage and current measurements, and oscilloscope analysis to identify issues. Consult the onsemi application note AND9173/D for troubleshooting guidelines and common failure modes.

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