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NSPM8181MUTBG - onsemi

Description: High peak current capability - 100 A; Low clamping voltage - 30 V @ 100 A

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PCB Footprints
NSPM8181MUTBG - onsemi PCB footprint - Other - Other - UDFN6, 1.8 x 2, 0.4P CASE 517CS ISSUE O
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3D Models
NSPM8181MUTBG - onsemi  - 3D model - Other - UDFN6, 1.8 x 2, 0.4P CASE 517CS ISSUE O
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NSPM8181MUTBG Details

  • Manufacturer Part Number:

    NSPM8181MUTBG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    UDFN-6

  • Package Description:

    UDFN6, 6 PIN

  • Manufacturer Package Code:

    517CS

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    onsemi

  • YTEOL:

    7.06

  • Breakdown Voltage-Max:

    23.5 V

  • Breakdown Voltage-Min:

    20 V

  • Breakdown Voltage-Nom:

    22.5 V

  • Clamping Voltage-Max:

    30 V

  • Configuration:

    SINGLE, 1 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Reference Standard:

    IEC-61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    18 V

  • Reverse Current-Max:

    1 µA

  • Reverse Test Voltage:

    18 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

NSPM8181MUTBG Frequently Asked Questions (FAQs)

  • A good thermal design should include a solid ground plane, thermal vias, and a heat sink. The datasheet provides some guidelines, but onsemi also offers a dedicated application note (AND9233/D) that provides more detailed recommendations for PCB layout and thermal management.
  • In addition to following the recommended PCB layout and thermal design, it's essential to consider the device's thermal derating, which is specified in the datasheet. Ensure that the device operates within the recommended temperature range, and consider using thermal interface materials or heat sinks to improve heat dissipation.
  • The high current capability of the NSPM8181MUTBG requires careful consideration of PCB trace widths, copper thickness, and via design to ensure reliable operation. It's recommended to use wide traces, thick copper, and multiple vias to reduce resistance and thermal stress.
  • The NSPM8181MUTBG has built-in overvoltage protection (OVP) and overcurrent protection (OCP) features. However, it's still essential to implement external protection mechanisms, such as TVS diodes, fuses, or PTC resistors, to ensure the device's reliability and prevent damage from external faults.
  • onsemi provides a dedicated application note (AND9234/D) that outlines recommended test and measurement techniques for characterizing the NSPM8181MUTBG's performance, including setup, equipment, and measurement procedures.

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NSPM8181MUTBG Overview

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