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NSR02F30MXT5G - onsemi

Description: Diode 30 V 200mA Surface Mount 2-X3DFN (0.6x0.3) (0201)

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NSR02F30MXT5G Details

  • Manufacturer Part Number:

    NSR02F30MXT5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    X3DFN-2

  • Package Description:

    X3DFN2, 2 PIN

  • Manufacturer Package Code:

    152AF

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW LEAKAGE CURRENT

  • Application:

    EFFICIENCY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.6 V

  • JESD-30 Code:

    R-PBCC-N2

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    2 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    125 °C

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.18 W

  • Rep Pk Reverse Voltage-Max:

    30 V

  • Reverse Current-Max:

    50 µA

  • Reverse Recovery Time-Max:

    0.003 µs

  • Reverse Test Voltage:

    30 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

NSR02F30MXT5G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness is recommended for the thermal pad, and it should be connected to a solid ground plane to dissipate heat efficiently.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator or a voltage reference is recommended to provide a stable input voltage. The biasing circuit should be designed to provide a stable voltage and current to the device.
  • The device is sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Handle the device in an ESD-protected environment, and use ESD-protective packaging and handling materials. Avoid touching the device's pins or exposed die to prevent damage.
  • The optimal gate resistor value depends on the specific application and the required switching frequency. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. A lower gate resistor value can improve switching speed, but may increase power losses. A higher gate resistor value can reduce power losses, but may slow down the switching speed.
  • When paralleling multiple devices, ensure that each device has its own gate resistor and that the gate signals are properly synchronized. The devices should be matched for optimal performance, and the PCB layout should be designed to minimize inductance and ensure good thermal performance.

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NSR02F30MXT5G Overview

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